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| (R) BZV47C5V1 / 200 2W ZENER DIODES FEATURES VOLTAGE RANGE : 5.1 V to 200 V HERMETICALLY SEALED PLASTIC CASE : F126 PACKAGE HIGH SURGE CAPABILITY : 55 W (10 ms) . DESCRIPTION 2 W silicon Zener diodes. F126 ABSOLUTE RATINGS (Tamb = 25C) Symbol P Tstg Tj TL Parameter Value Tamb = 55C 2 - 65 to + 175 175 230 Unit W C C C Power dissipation on infinite heatsink Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm from case THERMAL RESISTANCES Symbol R th (j-l) R th (j-a) Parameter Value 60 100 Unit C/W C/W Junction to lead Junction to ambient on printed circuit on recommended pad layout January 1998 Ed : 2 1/4 BZV47C5V1 / BZV47C200 ELECTRICAL CHARACTERISTIC (Tamb = 25C) TYPES VZT @ IZT min. max. (1) (1) V BZV47C5V1 BZV47C5V6 BZV47C6V2 BZV47C7V5 BZV47C10 BZV47C12 BZV47C15 BZV47C18 BZV47C20 BZV47C22 BZV47C24 BZV47C27 BZV47C30 BZV47C36 BZV47C39 BZV47C47 BZV47C68 BZV47C100 BZV47C150 BZV47C200 4.8 5.2 5.8 7 9.4 11.4 13.8 16.8 18.8 20.8 22.8 25.1 28 34 37 44 64 94 138 188 V 5.4 6 6.6 7.9 10.6 12.7 15.6 19.1 21.2 23.3 25.6 28.9 32 38 41 50 72 106 156 212 rZK/ IZK max. IZT (1) 5 2 2 2 4 7 10 15 15 15 15 15 15 40 40 45 80 200 300 350 mA 100 100 100 100 50 50 50 25 25 25 25 25 25 10 10 10 10 5 5 5 10-4/C 1 2.5 3.2 4.5 5.5 6.5 7 7.5 7.5 8 8 8.5 8.5 8.5 9 9 9 9 9.5 9.5 A 5 5 5 5 5 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 V 1 1 1 2 7.6 9.1 11.4 13.7 15.2 16.7 18.2 20.5 22.8 27.4 29.6 35.7 51.7 76 114 152 VZ typ. I R / VR max. VR IZM Tamb=55C (2) mA 370 330 300 250 185 155 130 105 94 86 78 69 62 52 48 40 27 18 12.8 9.4 IZSM (3) A 7.8 7.1 6.4 5.4 4 3.3 2.7 2.2 2 1.8 1.7 1.5 1.3 1.1 1 0.85 0.59 0.4 0.27 0.20 Note 1 : Pulse test : tp 50ms Note 2 : On infinite heatsink : L = 10mm Note 3 : rectangular waveform (tp = 10ms) Forward voltage drop : VF 1.2 V (Tamb = 25C, I F = 500mA) Fig. 1 : Power dissipation versus ambient temperature. Fig. 2 :Thermal resistance versus lead length. 2/4 (R) BZV47C5V1 / BZV47C200 Fig. 3 : Relative variation of thermal impedance junction to ambient versus pulse duration (PC board FR4, Lleads = 10mm). Fig. 4 : Junction capacitance versus reverse voltage applied (typical values). Fig. 5 : Peak forward current versus peak forward voltage drop (typical values). Fig. 6 : Leakage current versus regulation voltage (typical values). IR(A) 1E+2 Tj = 150C VR = 0.75*VZT 1E+1 1E+0 1E-1 1E-2 VZT (V) 1E-3 1 10 100 200 Fig. 7 : Differential resistance versus regulation voltage (typical values). Fig. 8 : Peak pulse power versus pulse duration (rectangular waveform, maximum values). (R) 3/4 BZV47C5V1 / BZV47C200 MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). ORDER CODE BZV47C 5V1 Type Nominal Voltage PACKAGE MECHANICAL DATA F126 (Plastic) DIMENSIONS REF. Millimeters Min. A B C D L1 6.05 26 2.95 0.76 3.00 0.81 Inches Typ. Max. 0.244 0.250 1.220 0.118 0.032 0.120 0.034 0.050 Typ. Max. Min. 6.20 6.35 31 3.05 0.86 1.27 0.238 1.024 0.116 0.030 Note1 : Thelead is notcontrolled within zoneL1. Packaging : standard packaging is in tape and reel. Weight = 0.40 g. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 (R) |
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